| 摘要 |
PURPOSE:To provide a large-sized chip semiconductor device with ease without improving the performance of a reducing lens system by performing exposure a plurality of times using photomask corresponding to respective divided areas yielded by dividing one chip to a plurality of ones. CONSTITUTION:A chip 1 is halved such that the length of the chip 1 is less than 15mm for example. There are provided reticle patterns 5, 7 having patterns RA, RB of a predetermined magnification with respect to patterns A, B on divided regions 2, 3 on reticles 4, 6 being photomask for the respective divided regions 2, 3. Then, the reticle pattern 5 is reduced and transferred onto the divided region of the chip 1 on the entire surface of a wafer 8, and the reticle pattern 7 is reduced and transferred onto the divided region to bake the patterns A, B. Accordingly, once the wafer 8 is developed, a pattern C chip 1 where the patterns A and B are joined is formed, Hereby, a semiconductor device on which a large-sized chip of one side more than 15mm can be yielded without improving the performance such as aberration and resolving power of a lens. |
