| 摘要 |
PURPOSE:To make a conductive film thin to decrease etching so as to get transparent conductive film with an increased yield by adding a specified metal to indium oxide as a main component to lower resistance. CONSTITUTION:Transparent conductive film whose main component is indium oxide (In2O3) is constituted such that it contains at least one of ZrO2 at xmol%, Nb2O5 at ymol% and Ta2O5 at zmol% of indium (In2O3), respectively, within a range where 0<=x<=20, 0<=y<=1.7, 0<=16.5, x+y+2z>=2, x+1.2y+1.2z<=20. The values of x, y and zmol% are the values referring to 100mol% of the whole composition including the quantity of In2O3. The transparent conductive film constituted thereof has a good film characteristic so that it is possible to reduce film thickness and also decrease an etching time and increase a yield.
|
