Metal organic chemical vapor deposition method with controlled gas flow rate,申请号US19880271278-传众专利搜索

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发明名称	Metal organic chemical vapor deposition method with controlled gas flow rate
摘要
申请公布号	US4980204(A)	申请公布日期	1990.12.25
申请号	US19880271278	申请日期	1988.11.15
申请人	FUJITSU LIMITED	发明人	FUJII, TAKUYA;YAMAZAKI, SUSUMU
分类号	C23C16/455	主分类号	C23C16/455
代理机构		代理人
主权项
地址

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