摘要 |
<p>PURPOSE:To obtain the electrooptical device capable of being driven at a low voltage, without causing crosstalk and having an excellent picture quality by forming an insulating layer formed on plural picture element electrodes arranged on a first plane substrate with a semiconductor thin film. CONSTITUTION:The transparent picture element electrodes 2 are arranged on the first glass substrate 1 as a matrix, and plural first signal lines 3 are formed as longitudinal stripes. An island-shaped semiconductor thin film 4 is formed on a part of the electrode 2, and a first signal line 3' is overlapped with the part. The counter substrate consists of a second transparent glass substrate 5 and the plural second transparent signal lines 6 as lateral stripes orthogonal to the first signal lines 3 formed on the surface. The pitch of the second signal lines 6 and that of the electrodes 2 are equalized so that the line 6 is confronted with the electrode 2. Consequently, the capacity ratio is increased and crosstalk is reduced. Furthermore, the device can be driven at a low voltage since the current density of the MIM element is high, and the gradation or contrast is enlarged, and the picture quality is improved.</p> |