| 摘要 |
<p>PURPOSE:To manufacture wirings having satisfactory coverage and flatness by a method wherein, after the wirings made of Al or alloy mainly composed of Al are formed on a substrate by a sputtering method, the substrate to be treated is heated to the temperature higher than 2/3 of the melting point of the wiring material in terms of an absolute temperature without being released in the air. CONSTITUTION:Wiring layers made of Al or alloy mainly composed of Al are formed on a semiconductor substrate having step parts by a sputtering method. Then the substrate to be treated is subjected to a process in which the substrate is heated to the temperature higher than 2/3 of the melting point of the material of the formed wirings in terms of an absolute temperature. That is, under a temperature higher than 2/3 of the melting point of the alloy, metal atoms have sufficient energy to move and the mobility is increased. If these properties are utilized, Al on the step parts is sufficiently fluidized to improve the step coverage by the action of a surface tension. Moreover, if the temperature is elevated close to the melting point of the used metal, the step coverage can be improved significantly.</p> |
