An emitter of the thyristor is divided into a multiplicity of emitter regions (2 to 5). Contact is made to the latter in a principal face (1a) of the thyristor by first electrodes (10 to 13) which are connected to a principal contact (K) of the thyristor via individually assigned resistance elements (Rv). In addition to the emitter regions, further electrodes (14 to 17) are provided via which the turn-off current paths (18 to 21), which are in all cases parallel, run from the base (6) adjacent to the emitter regions via field-effect transistors (T1 to T4) to the said principal contact (K). The resistance elements (Rv) ensure that all the load current components apportioned to the individual emitter regions (2 to 5) can be reliably turned off. <IMAGE>
申请公布号
EP0389862(A3)
申请公布日期
1990.12.19
申请号
EP19900104736
申请日期
1990.03.13
申请人
SIEMENS AKTIENGESELLSCHAFT
发明人
OPPERMANN, KLAUS-GUENTER, DIPL.-PHYS.;SCHWARZBAUER, HERBERT, DR.;STENGL, REINHARD, DR. DIPL.-PHYS.