发明名称 Circuit for internal current limiting in a fast high side power switch.
摘要 <p>A current limiting circuit (200, 300, 400) for instantaneously limiting the peak current of a fast high side power switch (212) or power FET has a reference switch (213) or FET, a first comparator (218), a current source ICL, control circuitry (209), and a clamping circuit (238). The reference FET (213) is smaller than the power FET (212). The first comparator compares the voltage drop across the power FET (212) and compares it with the voltage drop across the reference FET (213) and produces a signal COMPOUT which initiates the turn-off of the power FET (212) if the voltage drop across the power FET (212), caused by a load current flowing through it, is greater than or equal to the reference FET voltage drop induced by ICL. The clamp circuit (238), having diodes (D1, D2) and a tracking current source I'CL, disconnects the FETS (212, 213) from the comparator (218) when they are OFF. The circuit (200, 300, 400) may also have a second comparator (250) which protects the power switch (212) from a short circuit condition in the circuit (200, 300, 400).</p>
申请公布号 EP0402928(A2) 申请公布日期 1990.12.19
申请号 EP19900111262 申请日期 1990.06.14
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 SZEPESI, TAMAS S.
分类号 G05F3/26;G05F3/24;H02M3/00;H02M3/155;H03K17/06;H03K17/082 主分类号 G05F3/26
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