NONVOLATILE SEMICONDUCTOR MEMORY,申请号EP19900104981-传众专利搜索

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发明名称	NONVOLATILE SEMICONDUCTOR MEMORY
摘要
申请公布号	EP0387889(A3)	申请公布日期	1990.12.19
申请号	EP19900104981	申请日期	1990.03.16
申请人	KABUSHIKI KAISHA TOSHIBA;TOSHIBA MICRO-ELECTRONICS CORPORATION	发明人	YOSHIZAWA, MAKOTO, C/O INTELLECTUAL PROPERTY DIV.;MOHRI, KATSUAKI, C/O INTELLECTUAL PROPERTY DIV.;NAKASHIRO, TAKESHI, C/O INTELLECTUAL PROPERTY DIV.;MARUYAMA, TADASHI, C/O INTELLECTUAL PROPERTY DIV.
分类号	G11C17/00;G11C16/04;G11C16/26;H01L21/8247;H01L29/788;H01L29/792;(IPC1-7):H01L29/788	主分类号	G11C17/00
代理机构		代理人
主权项
地址

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