| 摘要 |
<p>Measuring means comprising first and second silicon PIN diode detectors (1, 2) both being covered with a thin layer of conducting material (3, 5) and the second detector being additionally covered with a relatively thick layer of material (4), the thickness being chosen such that beta radiation dose rate can be measured in beta radiation fields of high or medium energy, and in the presence of X and gamma radiation.</p> |
