| 摘要 |
PURPOSE:To implement the method by which the true surface temperature of a heated semiconductor single crystal substrate is found, by thinly applying a black heat resisting paint whose radiating coefficient is already known to the surface of the semiconductor single crystal substrate. CONSTITUTION:The black heat resisting paint 6 is applied to a part of the surface of the semiconductor substrate 5 which is heated in a high vacuum system 2. Said semiconductor substrate 5 is fixed to a substrate holder 4 made of Mo. A thermocouple 8 is attached to the substrate holder 4. A substrate heater 7 is provided. The heated semiconductor substrate 5 is measured by an infrared ray thermometer 1 through a viewport glass 3. Meanwhile, an Mo plate on which the black heat resisting paint is applied is placed in an equal heat furnace 9 and the black heat resisting paint surface 6 is measured. Then the heat radiation coefficient and the loss in the viewport glass are obtained. Based on the relationship in these values, a temperature curve when the temperature of the semiconductor substrate is measured by the infrared thermometer is obtained, and the true surface temperature is obtained. |
