| 摘要 |
PURPOSE:To improve characteristics of a polycrystalline Si MIS type FET and prevent the deterioration of characteristics of a substratum device, by arranging a silicon nitride film in an island form, so as to cover a channel region. CONSTITUTION:By thermally oxidizing a P-type Si substrate 101, an SiO2 film 102 is formed; thereon a polycrystalline Si film 103 and an SiO2 film 104 are deposited; ion is implanted into the film 103, and the film 104 is eliminated; a gate electrode 103' is formed by processing the film 103; an SiO2 film 105 is deposited and heat-treated, thereby forming a gate oxide film; thereon an Si film 106 is deposited and processed in a specified form: an SiO2 film 107 is deposited; ion is implanted; impurity is activated, thereby forming a P-type high concentration impurity region of source.drain; an SiO2 film 108 is formed; an Si nitride film 109 is deposited and processed in a specified form; a contact hole is formed; an Al-Si film 110 is deposited; a wiring pattern is formed; finally a PSG film 111 is deposited, thereby forming a protecting film. |
