| 摘要 |
<p>A method of forming an electrical contact between interconnection layers located at different layer levels includes the steps of forming a contact hole (6) in an interlayer insulating film (4), and forming a metallic intermediate layer (8) on an exposed surface portion of a first conductive interconnection layer (3) and the interlayer insulating film. Then, a portion of said metallic intermediate layer exposed through said contact hole and an oxide film (4) formed on said surface portion of the first conductive interconnection layer are eliminated by an etching process. This process is carried out in a vacuum. After that, in the vacuum, a second conductive interconnection layer (9) is formed in said contact hole and formed on said interlayer insulating film so that an electrical contact between said first and second conductive interconnection layers are formed.</p> |
