发明名称 Integrated semiconductor device including an electrooptical switch.
摘要 <p>Device which comprises, on the one hand, a direct coupler structure into which one of the guides receives the luminous entrant power and the other guide is formed from multiple quantum wells, a structure whose dimensions are such that in the static state the switch is in the crossed state and, on the other hand, means for controlling the switching, characterised in that: - on the one hand, the structure comprises layers forming at least one PIN structure in which the guide formed from multiple quantum wells constitutes an intrinsic region I, - and, on the other hand, the control means include means for reverse biasing the PIN structure acting as negative feedback for ensuring that the switching from one state into the other is initiated by a change of level of the luminous power injected into the entrant guide. Application: Electrooptical switching arrays for optical telecommunications. &lt;IMAGE&gt;</p>
申请公布号 EP0401925(A1) 申请公布日期 1990.12.12
申请号 EP19900201419 申请日期 1990.06.05
申请人 LABORATOIRES D'ELECTRONIQUE PHILIPS;N.V. PHILIPS' GLOEILAMPENFABRIEKEN 发明人 CAVAILLES, JEAN-ARISTIDE
分类号 G02B6/122;G02B6/12;G02F1/017;G02F1/313;G02F1/35;G02F3/02 主分类号 G02B6/122
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