发明名称 Dram nonvolatizer
摘要 A nonvolatile memory subsystem includes DRAMs and a battery-backed controller chip. The controller chip monitors the system power supply level to ascertain power fault conditions. When a power fault is detected, the controller provides the DRAMs with both a regulated supply voltage and appropriately timed refresh signals. After the system power supply has returned to specification, the controller continues to generate refresh control signals until the commands it to stop.
申请公布号 US4977537(A) 申请公布日期 1990.12.11
申请号 US19880248865 申请日期 1988.09.23
申请人 DALLAS SEMICONDUCTOR CORPORATION 发明人 DIAS, DONALD R.;SCHERPENBERG, FRANCIS A.
分类号 G06F1/30;G06F11/20;G11C11/406;G11C11/4074;G11C11/4076 主分类号 G06F1/30
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