| 摘要 |
PURPOSE:To execute an etching operation whose quality is high and whose surface flatness is excellent without damaging a substrate by installing the following: a means by which high-frequency electric power of a first frequency is supplied to an electrode provided with a protective layer; a means by which high frequency electric power of a second frequency smaller than the first frequency is supplied to a susceptor. CONSTITUTION:An electrode 107 is installed in addition to a susceptor electrode 104; a high-frequency power supply of large electric power is supplied to the electrode 107; thereby, a high-density plasma is generated; a high-speed etching operation is executed. A frequency (first frequency) of the high-frequency power supply which is supplied to the electrode 107 is made larger than a second frequency; a self-bias is made small; a protective film 101 is formed on the surface of a base material for the electrode 107. On the other hand, a self-bias which is generated at the susceptor electrode 104 is installed by electric power of a high-frequency power supply of the second frequency and by a frequency. The frequency of 100MHz or higher is selected and supplied to the susceptor.
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