| 摘要 |
PURPOSE:To easily form a trench type capacitor having an N-type or P-type diffusion layer by a method wherein a trench is formed by using gas containing one of arsenic, antimony, phosphorus, and boron, and at the same time a film containing one of arsenic, antimony, phosphorus, and boron is deposited on the inner wall of a trench. CONSTITUTION:By using gas containing at least one of arsenic, antimony, phosphorus, and boron as reaction gas, a trench 4 is formed on a semiconductor substrate 1, and at the same time a film 5 containing one of arsenic, antimony, phosphorus, and boron is deposited on the inner wall of the trench 4. By heat- treating the film, a high concentration diffusion layer 6 is formed on the inner wall of the trench. That is, without requiring a special process like ion implantation, the trench 4 is formed, and at the same time the film 5 containing impurity is deposited on the inner wall of the trench 4, so that the impurity diffusion layer 6 is formed on the inner wall of the trench. Thereby a trench type capacitor having an N-type or P-type diffusion layer can be easily formed. |
