PROCESS FOR PRODUCING DOPED SEMICONDUCTOR LAYERS

摘要

A b s t r a c t Disclosed is a process for producing doped semiconductor layers having a low concentration of charge carriers. The present invention is distinguished by a multiplicity of thin layers being applied on top of each other having alternately comparatively high concentrations of charge carriers and no doping and the thickness and the concentration of charge carriers of the individual layers being proportioned in such a manner that the desired low concentration of charge carriers is yielded by averaging the multiplicity of layers.