| 摘要 |
PURPOSE:To obtain electrode wiring which is of low resistance and free from junction leak by opening an aperture in an interlayer insulating film on a diffusion layer whose junction depth is less than or equal to 0.2mum, filling the aperture with CVDW, covering the interface between W and the interlayer insulating film with barrier metal, and forming an Al wiring. CONSTITUTION:An N<+> diffusion layer 2 is formed on a P-type Si substrate 1, and a connection hole 4 is opened in an interlayer insulating film 3. By reducing WF6 with H2, CVDW 6 is selectively grown in the hole 4. After high melting point barrier metal TiN 6 and Al 7 are continuously deposited on the whole surface by sputtering method, a wiring pattern is formed and processed at 400 deg.C or more. By this constitution, at the time of connecting the wiring with a substrate having a shallow junction by a simple method and with high aspect ratio, the connection resistance can be stably reduced, so that an IC of high density and high speed can be realized. |
