| 摘要 |
PURPOSE:To eliminate the abnormal biting of a pattern section independently of substratum material, and generalize the adaptability of resist material, by making the substratum material or a silicon oxide film dense. CONSTITUTION:On a substrate, a film composed of substratum material is treated by CVD method or vacuum deposition method, or formed by spreading method. The film is heat-treated at a high temperature, thereby obtaining a dense state. Thereon a film composed of chemical amplification system resist containing compound which generates acid turning to catalyst by radiant ray irradiation is formed. After energy beam of a desired pattern is projected, a pattern is formed by development. Thereby catalyst in the resist can be prevented from moving into the substratum material, the abnormal biting phenomena of a pattern section is dissolved, and the adaptability of resist material is generalized. |
