| 摘要 |
PURPOSE:To eliminate crystal defect and to improve the degree of freedom in design by selecting the thicknesses of specified superlattices I and II so that the average lattice constant of the entire system is almost equalized to the lattice constant of a substrate and laminating the superlattices on the substrate of InP. CONSTITUTION:The InP substrate 4 is set on a substrate holder 5 in a growth chamber 1 held at degree of vacuum of 10<-10>Torr, and heated to 200-400 deg.C by a heating mechanism 3. The shutter 10c of a cell 11c contg. a ZnS material and the shutters 10a and 10b of the cells 11a and 11b respectively contg. Zn and Te materials are alternately opened and closed to form the superlattices I and II consisting of ZnTe and ZnS by molecular-beam epitaxy. The lattice I having the average lattice constant smaller than the lattice constant of the substrate 4 is then formed on the substrate 4 in about 143 cycles, the lattice II having the average lattice constant larger than the lattice constant of the substrate 4 is formed on the lattice I in about 100 cycles, and the superlattice structural element having about 5.8688Angstrom average lattice constant and having the lattice constant conforming to the inequality is obtained (ds1 is the average lattice constant of the superlattice I, ds11 is the average lattice constant of the superlattice II, and dinp is the lattice constant of the substrate). |
