| 摘要 |
PURPOSE: To minimize the intrusion of tungsten underneath a dielectric body/ silicon interface, the consumption of silicon, and damage to the silicon by adhered tungsten which forms a contact hole by etching an inter-level dielectric layer, a sealing layer, and an oxide layer to a substrate. CONSTITUTION: After a sealing dielectric layer 44 and an inter-level dielectric layer 46 are successively formed on an oxide layer 34 formed on a silicon substrate 30, a contact hole 48 is formed by etching the layers 46, 44, and 34 to a substrate 30. Then a dopant is injected into the area, and the injected dopant is made to self-align with the contact hole. After the substrate 30 has been annealed, tungsten is selectively adhered to the contact hole 48, and an interconnecting layer 62 is formed on an adhered tungsten contact 58. Therefore, harmful effects of the adhered tungsten on the silicon substrate can be minimized. |
