发明名称 NON-VOLATILE SEMICONDUCTOR STORAGE
摘要 <p>PURPOSE:To shorten a read access time by increasing the charging ability of a circuit, which charges a bit line to a prescribed voltage through a bit line decoder, only for a prescribed time in a sense amplifier circuit. CONSTITUTION:In addition to a feedback type bias circuit composed of an inverter 2 and an N-channel transistor Q3, the other feedback type bias circuit is composed of an inverter 3, which is controlled by a control signal ATD, and N-channel transistor Q6. This bias circuit is set in an operational state only for the prescribed time and the bit line of a memory transistor M1 is charged to the prescribed voltage through respective bit line selecting transistors Q4 and Q5. Thus, time for charging the bit line can be shortened.</p>
申请公布号 JPH02285593(A) 申请公布日期 1990.11.22
申请号 JP19890106324 申请日期 1989.04.26
申请人 MITSUBISHI ELECTRIC CORP 发明人 MAKIHARA HIROYASU;KODA KENJI;KOROGI YASUHIRO
分类号 G11C17/00;G11C16/06;H01L21/8247;H01L27/10;H01L29/788;H01L29/792 主分类号 G11C17/00
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