| 摘要 |
The manufacture of semiconductive devices is described in which a semiconductive material having a metallised electrode 10 and bond pad 11 connected by a coplanar bridging connector 19 is wet etched to isolate the bond pad by etching material from beneath the bridging connector to form a trench, and in which the bridging connector has, over the trench position, orthogonal parts 19b, 19c to prevent continuous unetched ridges due to uneven etching extending from beneath the electrode to beneath the bond pad. <IMAGE> |
