| 发明名称 |
Photodiode and photodiode array on a II-VI material and processes for the production thereof |
| 摘要 |
Photodiode and array of photodiodes on II-VI material and their production processes. The photodiodes (48) are formed in a type P, Hg1-xCdxTe semiconductor layer (13) with 0</=x</=1 deposited directly on a CdTe insulating substrate (11), having an active zone (37) of type N, a first electrical contact (47) on the semiconductor layer, a second electrical contact (45) on the active zone, and insulant (21) separating the first and second electrical contacts and an insulation or isolation trench (15), whose depth exceeds the thickness of the active zone and surrounding the latter, the first electrical contact (47) being located in the bottom (27) of the trench.
|
| 申请公布号 |
US4972244(A) |
申请公布日期 |
1990.11.20 |
| 申请号 |
US19890362605 |
申请日期 |
1989.06.07 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
BUFFET, JEAN-LOUIS O.;LAURENT, JEAN-YVES;ROCHAS, JEAN-LUC |
| 分类号 |
H01L27/144;H01L31/0224;H01L31/0296;H01L31/103;H01L31/18 |
主分类号 |
H01L27/144 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
