Single crystal pulling - with dispenser rod tapered for seed by induction heating

摘要

Monocrystalline silicon semiconductor material is produced by successive inductive heating, without a crucible, of a rotating rod with a small seed crystal at the end. Before the latter is fused to the dispenser rod, the rod is chamfered at its end to a truncated cone by rotating its end at an angle relative to a hairpin induction coil and melting off the excess material. When finished, the cross-sectional ratio of seed to dispenser rod is a max of 1:5.