Semiconductor integrated circuit device of multilayer interconnection structure

摘要

A semiconductor integrated circuit device of multilayer interconnection structure includes a pad (34) formed of a multilayer interconnection layer (52, 54). The power source pad (34) is connected to a power source interconnection layer (33) via a lead-out interconnection layer (35) which is formed of the same multilayer interconnection layer (52, 54) as that used to form the power source pad (34).