发明名称 X-RAY MASK AND ITS MANUFACTURE
摘要 <p>PURPOSE:To make it possible to reduce the temperature rise of an X-ray mask even if high-output X-rays are irradiated on the mask at the time of exposure using SOR light and to eliminate the distortion of the mask due to a thermal expansion by a method wherein the X-ray mask is provided with a heat dissipation film consisting of a material having a thermal conductivity of a specified value or higher. CONSTITUTION:An X-ray mask is provided with a heat dissipation film having a thermal conductivity of 3.0cal(cm.sec. deg.C)<-1> or higher. That is, a heat dissipation film 9a, such as a hexagonal boron nitride (C-BN) film 2a, is formed on an Si water substrate 1 in a thickness of 0.1mum. Then, a silicon nitride film 3, which is an X-ray transmitting material 6, and a tungsten film 4, which is an X-ray absorber, are deposited using a high-frequency sputtering method. Then, a tungsten pattern 5 is formed by etching the film 4 using a reactive ion etching method. After this, a C-BN film 2b, which is a heat dissipation film 9b, is formed in a thickness of 0.1mum. After that, the X-ray mask is obtained by etching the substrate 1 form its back.</p>
申请公布号 JPH02276235(A) 申请公布日期 1990.11.13
申请号 JP19890096451 申请日期 1989.04.18
申请人 MATSUSHITA ELECTRON CORP 发明人 NIKAWA HIDEO
分类号 G03F1/22;G03F1/50;G03F7/20;H01L21/027 主分类号 G03F1/22
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