| 摘要 |
<p>PURPOSE:To prevent a display electrode from defective short-circuiting even if a pattern defect is generated and to improve the yield by forming an insulating film after a gate electrode is formed, then forming a display electrode and a gate insulating film, and coupling the display electrode with the source electrode of the thin film transistor(TFT) through through-hole wiring with drain wiring metal. CONSTITUTION:The insulating film 3 is formed on the gate electrode 2, the display electrode 4 is formed on it, and the gate insulating film 5 and a semiconductor layer 6 are further formed thereupon. The display electrode 4 and TFT 8 are connected electrically to each other through a through hole 9 formed in the gate insulating film 5. Namely, the display electrode 4 and gate 2 are separated by an SiO2 film 3 and the display electrode 4 and drain 7 are separated by a silicon nitride film which is the gate insulating film 5. Consequently, electrical short-circuiting never generated between the display electrode 4 and drain 7, and the short-circuiting defect can be eliminated.</p> |
