| 摘要 |
PURPOSE:To obtain a thin film which is suitable for a passivation layer, wihtout imparting radiation damages on the surface of a semiconductor by mixing inactive gas such as Xe in silane mixture, and performing photochemical reaction under the specified temperarure. CONSTITUTION:Gases such as SiH4, B2H6, PH3, and Xe from pressurized containers are regulated 4 and sent to a quartz reaction chamber 1 throuh a gas pipe 2. A substrate 5 in the reaction chamber is heated by a heater 6 to a specified temperature. Photon energy is supplied by a mercury arc lamp. In this method, resonant radiation is generated owing to the mixture of the inactive gas such as Xe. Molecules in a reacting system is excited into an active state by said irradiation, the photochemical reaction is geneated, and the amorphous silicon is evaporated at 300 deg.C or less. At this time, almost entire radiation is absorbed by the inactive gas such as Xe. Therefore, damages are not imparted to the surface of the semiconductor, and the thin film which is suitable for the passivation layer can be obtained. |
