Process for fabricating small size electrodes in an integrated circuit

摘要

According to the invention, a first layer of conductive material (11) is submitted to an incomplete etching operation in the presence of a mask (13). After elimination of the mask, a second layer of conductive material is deposited, and the thus-obtained result is submitted to an etching operation without a mask, so allowing the inter-electrode gaps to be reduced. The process provides a very tight electrode configuration, and is particularly suited to charge-coupled devices.