Dynamic random access memory device having a plurality of improved one-transistor type memory cells,申请号US19880171094-传众专利搜索

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发明名称	Dynamic random access memory device having a plurality of improved one-transistor type memory cells
摘要
申请公布号	US4969022(A)	申请公布日期	1990.11.06
申请号	US19880171094	申请日期	1988.03.21
申请人	NEC CORPORATION	发明人	NISHIMOTO, SHOZO;INOUE, YASUKAZU;KOTAKI, HIROSHI
分类号	H01L21/8242;H01L27/108;H01L29/94	主分类号	H01L21/8242
代理机构		代理人
主权项
地址

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