| 摘要 |
PURPOSE:To form patterns having a high resolution even with a high-reflectivity substrate by incorporating a specific light absorbent into the photoresist. CONSTITUTION:The compd. expressed by formula I is incorporated as the light absorbent into the photoresist. In the formula I, R1 to R3 denote a hydrogen atom, hydroxy group, halogen atom, substd. or unsubstd. alkyl group etc., X, Y respectively independently denote a cyano group, etc. The compd. expressed by the formula I is usually used at 0.1 to 20% of the solid content of the photoresist. Halation preventing effect is low if the ratio is below this range. Profiles and sensitivity are poor if the ratio exceeds the above-mentioned range. The patterns having the high resolution without having halation and notching are formed on the high-reflectivity substrate in this way. |
