发明名称 ELECTROSTATIC INDUCTION TYPE TRANSISTOR LOGIC
摘要 PURPOSE:To reduce the amplitude of operation by the amplitude corresponding to the forward voltage drop, to decreased the power-delay time product, and also to omit the resistance domain for electrode formation, by inserting a Schottky diode to the part corresponding to the electrode of the rain domain present between the gate domains.
申请公布号 JPS53122385(A) 申请公布日期 1978.10.25
申请号 JP19770037407 申请日期 1977.03.31
申请人 MITSUBISHI ELECTRIC CORP 发明人 HIRAO TADASHI;KIJIMA KOUICHI;NAKANO TAKAO
分类号 H01L29/80;H01L21/8222;H01L27/02;H01L27/06;H03K19/094 主分类号 H01L29/80
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