| 摘要 |
PURPOSE:To easily form, on the whole wafer surface, an island type semiconductor layer which is uniform in thickness and free from damage, by using alkaline abrasive solution, and polishing the wafer in the manner in which the polishing speed ratio of semiconductor layers inside and outside a recessed part of insulator is kept larger than or equal to a specified value. CONSTITUTION:Alkaline abrasive solution is used, and a wafer is polished in the manner in which the polishing speed ratio of a semiconductor layer 21b inside a recessed part of insulator 23 and a semiconductor layer 2 1A outside the recessed part is kept 1:20 or more. As a result, after the polishing has reached the recessed part of the insulator 23, the polishing of the semiconductor layer 21B in the recessed part is rapidly decreased; a part of the semiconductor layer 21A which remains on the insulator 23 because of the thickness irregularity of the semiconductor wafer 21 is positively polished, and the insulator 23 is not polished. Thereby an island type semiconductor thin laver 52 having almost the same surface as the upper surface of the insulator 23 is formed in each recessed part of the insulator 23 on the whole wafer surface.
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