| 摘要 |
PURPOSE:To reduce occupied area of an electrode and reduce contact resistance by forming the electrode due to a metal paste on the surface of a second conductivity type diffusion layer formed on the surface of a first conductivity type semiconductor through a polysilicon layer which is subjected to heat treatment. CONSTITUTION:A polysilicon layer 4 of the same shape as an electrode which is subjected to heat treatment is provided on the surface of a second conductivity type diffusion layer 2 formed on the surface of a first conductivity type semiconductor substrate 1 and then an electrode 5 due to a metal paste is formed on it. Thus, the heat-treated polysilicon layer is provided between the electrode due to the metal paste and a diffusion layer which is a light-receiving surface. Therefore, it is possible to reduce contact resistance as well as electrode occupation ratio. |
