发明名称 MANUFACTURE OF PHOTOMASK FOR OPTICAL MEMORY ELEMENT
摘要 <p>PURPOSE:To accurately transfer the pattern of a photomask to a substrate by providing resist directly on the mask substrate, exposing it with light beams differing in intensity, forming >=2 kinds of grooves differing in depth by etching, forming a light shield film over the entire surface of the mask substrate and removing the light shield film of the part expect the grooves. CONSTITUTION:The light-transmissive mask substrate 2 is coated with the resist 6, which is exposed to at least two kinds of light A and A' differing in intensity and then developed; and etching is carried out successively to form at least two kinds of recessed parts 3 and 4 which differ in depth on the mask substrate 2 and the light shield film 8 is stuck on the surface of the mask substrate 2 including the recessed parts 3 and 4 and then the light shield film 8 stuck to the part except the recessed parts 3 and 4 is revoved. Therefore, when the resist 6 is exposed, excessive light is transmitted through the light- transmissive mask substrate 2, so the temperature rise of the resist 6 is suppressed and the exposure pattern to the resist 6 is accurately controlled. Consequently, the pattern of the photomask is accurately transferred to the substrate.</p>
申请公布号 JPH02266356(A) 申请公布日期 1990.10.31
申请号 JP19890089317 申请日期 1989.04.07
申请人 SHARP CORP 发明人 OTA KENJI;HIROKANE JUNJI;INUI TETSUYA;SAEGUSA MICHINOBU;IKENAGA HIROYUKI
分类号 G03F1/54;H01L21/027 主分类号 G03F1/54
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