COLUMN REDUNDANCY CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE

摘要

The circuit is for replacing the error column of the memory array block to the redundant column. Some redundant columns are inserted regardless of array block number. The blocr row decoder and the sense amplifier are used in common with one of peripheral blocks so that the chip area may be reduced. The high transfer speed of the N-MOS when trasitting to the low state is used so that the operating speed of the redundancy circuit is fast.