SEMICONDUCTOR DEVICE IN HETERO STRUCTURE AND ITS MANUFACTURE

摘要

PURPOSE: To produce embedded hetero-structure having a small-size active layer by growing semiconductor structure including the embedded active layer on a semiconductor substrate having a surface practically parallel with a crystal surface on which the active layer of a semiconductor is not grown. CONSTITUTION: A semiconductor substrate 11 having a crystal axial direction (111) parallel to the crystal plane, on which no III-V compound material is grown, is prepared. Then, the surface of the substrate is structured for applying a flat plane (100) inclined parallel to the crystal plane on which the III-V compound material is grown at a remarkable speed. Afterwards, an active layer 14 of laterally grown III-V compound semiconductor on the inclined flat plane (100) and a covering layer 15 of a non-selective conformal growing layer composed of a material having crystal plane dependent growth different from the active layer 14 are grown on the surface of the semiconductor substrate 11 by growing processing for a single step. That is, the conformal growing layer 15 is combined with the character of crystal dependent growth composed of the material having a substrate crystal plane in non-growing direction. Thus, the embedded layer having small vertical and horizontal directions can be formed.