| 摘要 |
PURPOSE:To prevent the infiltration of impurities into a semiconductor film and to elevate the critical temp. of the film by forming a protecting film of the same material as the superconducting film to be patterned on the surface of a mask substrate consisting of a metallic material provided with a pattern forming hole. CONSTITUTION:A protecting film 4(5) made of the same material as the superconducting film to be patterned using a mask substrate 3 is provided on at least one surface of the substrate 3 having pattern forming holes 2 and consisting of a metallic material. The substrate 3 is placed on a substrate 13 to be deposited (MgO substrate) and opposed to a superconducting material source 7 (target), and the superconductor liberated from the source 7 is deposited on the substrate 13 exposed from the hole 2. By this method, impurities are not diffused or spattered from the mask, and the characteristic of the formed superconductor film is kept excellent. |
