| 摘要 |
<p>PURPOSE:To obtain the stable operation under the large electric power by forming an oxide thin film made of an n-type semiconductor thin film and having low electron affinity on the surface of a p-type ceramic semiconductor. CONSTITUTION:A p-type base body of an oxide made of Y-Ba-Cu-O is formed by sputtering in the composition of Y1Ba2Cu3O7 on the electrode of the p-type base body and an Ag plate serving as a support substrate. A very thin n-type semiconductor is formed as a surface layer by reaction sputtering on the p-type base body in the mixed gas with the same capacity ratio of Ar and O2 at the pressure 1-2 Torr using a target mixed with Al2O3 3wt.% and BaO 2wt.% to ZnO and sintered. An electron emitting electrode thus manufactured has excellent characteristic and stability, thus it can be utilized in a wide field such as a photo-cathode or a diode for a photoelectron multiplier or a secondary electron multiplier. A stable oxide semiconductor is used for this electrode, and p-n connection absorbing the energy of incident photons or electrons and efficiently emitting electrons is constituted of an n-layer with a thin surface and small work function.</p> |
