发明名称 HEAT-TREATING FURNACE FOR SEMICONDUCTOR WAFER
摘要 PURPOSE:To obtain a reaction furnace of high productivity, by providing a quartz boat insert opening and an airtight cover on a tube wall part corresponding to the wafer- placing position in a reaction tube, and by surrounding the entire periphery of the reaction tube with a split-type heater. CONSTITUTION:A quartz reaction tube 11 has inlet and outlet pipes 12, 13 and a boat insert opening 14 formed in the tube wall part corresponding to the installing position of a quartz boat 7 and is provided with a quartz cover 15 which is detachable and can airtightly seal the opening 14. A plate 17 is supported by the cover 15 through connecting rods so as to define a wall which is uniform with the reaction tube inner wall. The entire periphery of both the tube 11 and the cover 15 is covered with a heater constituted by a lower heater part 18 and an upper heater part 19, and the insert opening 14 and the cover 15, projecting from a window 22 of the upper heater part 19, are wrapped with a split-type heater 23. By this constitution, the quartz boat can be directly placed in the reaction tube without being slid thereon. In consequence, no quartz powder will fly. Thus, it is possible to prevent the production of any defect on a wafer and reduce the length of the reaction tube 11 to about 2/3 of that of the conventional reaction tube, and a reaction tube reduced in size and having an improved productivity can be obtained.
申请公布号 JPS58204529(A) 申请公布日期 1983.11.29
申请号 JP19820087430 申请日期 1982.05.24
申请人 TOKYO SHIBAURA DENKI KK 发明人 YASUDA OKIMITSU
分类号 H01L21/205;H01L21/00;H01L21/22 主分类号 H01L21/205
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