发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 The semiconductor memory includes a plurality of memory cell arrays having repetitive patterns. In the device, several column decoders are adjacent to memory cell arrays and have repetitive patterns. A portion of the column decoders is displaced from a regular location in the column decoder to a separate location on a substrate of the semiconductor memory device to leave a blank portion in the column decoder. The device also includes an input/ output buffer circuit, data buses for connecting the memory cell arrays to the input/output buffer circuit through spaces outside the column decoders. Conductors connect the displaced portion of column decoders located in the separate location to the memory cell arrays through spaces outside the column decoders.
申请公布号 KR900007741(B1) 申请公布日期 1990.10.19
申请号 KR19860006740 申请日期 1986.08.16
申请人 FUJITSU CO. LTD. 发明人 KURAHUJI SETSUYO;AOYAMA GEIJO;ITTO HIDEO
分类号 H01L27/10;G11C5/02;G11C7/10;G11C8/00;G11C11/34;G11C11/401;H01L21/8242;H01L27/108;(IPC1-7):G11C11/34 主分类号 H01L27/10
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