| 摘要 |
PURPOSE:To prevent the semiconductor or the glass of a substrate from generation of a crack by a method wherein a glass region to protect the surface is arranged separating into the parts of two places or more. CONSTITUTION:P type ring supplement regions 4 of the plural number of pieces are formed in the periphery of the P type base region 3 on the surface side of an N type high resistivity semiconductor substrate 1, a groove is formed as to cover the regions 4 thereof, and a glass region 7 is formed to be passivated. The region 7 thereof is separated into two parts 7', and moreover one piece 4' of the regions 4 is formed as to come in contact with both the edges of the glass regions 7' and an oxide film 6' at the surface part of the middle region thereof. By constructing the protective film in such a way, the film is made to be provided with flexibility to thermal strength, and a crack, a fracture, etc. are made hard to be generated, and glass passivation is made to performable extending over the broad region.
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