发明名称 FORMATION OF RESIST PATTERN AND BAKING APPARATUS USED THEREFOR
摘要 PURPOSE:To form a fine pattern of high accuracy by a method wherein a resist pattern after an exposure operation is irradiated with a ray of light containing light of a wavelength in a photosensitive region and, in succession, a heat treatment is executed in such a way that a temperature is raised continuously or intermittently. CONSTITUTION:The following are installed: a light irradiation part 5; a heating part 6 which has been formed in such a way that it is provided with a plurality of temperature regions or that its temperature is changed gradually; a conveyance part 4 which conveys a substrate 1 to be treated from the light irradiation part 5 to the heating part 6. The substrate 1 to be treated is heated and treated at a desired temperature-rise speed while it is being conveyed at a desired conveyance speed. That is to say, a resist pattern after an exposure operation is irradiated with a ray of light containing light of a wavelength in a photosensitive region; a reactive species is produced; then, a heating treatment is executed; a temperature of the produced reactive species is raised continuously or intermittently; after a developing operation, it is baked. Accordingly, it is possible to increase the temperature in accordance with the rise of a heat- resistant property caused by a cross-linking reaction. Thereby, it is possible to obtain a resist pattern whose heat-resistant property and pattern accuracy are high.
申请公布号 JPH02257614(A) 申请公布日期 1990.10.18
申请号 JP19890079408 申请日期 1989.03.30
申请人 TOSHIBA CORP 发明人 SATO KAZUO;TOKAWA IWAO;ITO SHINICHI
分类号 G03F7/38;H01L21/027 主分类号 G03F7/38
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