| 摘要 |
PURPOSE:To form a miniature pattern with high accuracy by providing a photo resist film in two stages, forming a tapered pattern on the upper photo resist layer and forming a lift-off spacer pattern through selective etching of such tapered area. CONSTITUTION:An Si3N4 film 12 is formed on a substrate 11 and thereafter a first photo resist layer 13 is formed. After forming a second photo resist layer 14, the layer 14 is tapered as the pattern. After a metal 16 is formed, the metal 17 on the tapered area 15 is etched. The lift-off pattern 18 is formed by etching the tapered area 15, layer 13 and film 12. Thereafter, an electrode 19 is formed and the layers 13, 14 are removed. Simultaneously, unnecessary metals 16, 19 are also removed and thereby the desired metal pattern 19' can be obtained. |
