A Lateral transistor and method of making same.

摘要

A method of fabricating a lateral transistor (110) is provided, including the steps of: providing a body of semiconductor material including a device region (30) of a first conductivity type (N<+>); patterning the surface of the device region to define a first transistor region (44); filling the patterned portion of the device region surrounding the first transistor region with an insulating material to a height generally equal to the surface of said first transistor region; removing portions of the insulating material so as to define a pair of trenches (22) generally bounding opposite sides of the first transistor region; filling the pair of trenches with doped conductive material (26) of opposite conductivity type to the first transistor region; and annealing the semiconductor body whereby to form second and third transistor regions (96,98) of opposite conductivity type to the first transistor region (44) in the opposing sides of the first transistor region completing the process to provide contact electrodes (102, 104, 106).