Semiconductor device with a gate having asymmetric sidewalls, and a production method thereof.

摘要

A production method of a semiconductor device constituting a Schottky barrier gate type field effect transistor includes the steps of producing a low concentration active region at a desired position of a semi-insulating compound semiconductor substrate and producing a gate electrode comprising refractory metal on the active region, producing a first insulating film and etching the same thereby to produce first side wall assist films comprising the first insulating film at the both side walls of the gate electrode, removing one of the first side wall assist films at the side where a source electrode is to be produced by wet etching, plating a second insulating film to the thickness less than that of the first insulating film, etching the second insulating film thereby to produce a second side wall assist film having narrower width than that of the first side wall assist film at the side wall of the gate electrode at the side where the source electrode is to be produced, and conducting ion implantation with using the first and second side wall assist films and the gate electrode as a mask thereby to produce high concentration active regions in asymmetrical configurations at left and right at the both sides of the gate electrode.