发明名称 MANUFACTURE OF SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To enable a layer-shaped electric charge accumulation electrode which is electrically connected to an element region through an opening of any size formed on the upper-part side surface of a trench and is along the inner wall of the trench by selectively etching the upper part of a conductive thin film along the inner wall of the trench which is continuous to the element region with a thermal oxide film as a mask. CONSTITUTION:After forming a first thin film 4, a first conductive thin film 5, and a second thin film 10 in sequence on the entire surface for a trench 3, the second thin film 10 on an element isolation region 1 is eliminated and a first conductive thin film 5 on the element isolation region 1 is selectively oxidized with the second thin film 10 as a mask. After that, the second thin film 10 and the first conductive thin film 5 on the element region and the continuous trench sidewall are eliminated and then the first thin film 4 on the upper part of the trench which is continuous to the element region is etched, thus forming an undercut at the first thin film 4 which is adjacent to the upper-edge part of a first conductive thin film 6. After that, by forming a second conductive thin film 8 at the undercut part of the first thin film 4 selectively, an electric charge accumulation electrode 13 which is electrically connected to the element region of the periphery of trench is formed.
申请公布号 JPH02249265(A) 申请公布日期 1990.10.05
申请号 JP19890071091 申请日期 1989.03.22
申请人 MATSUSHITA ELECTRON CORP 发明人 KOIKE NORIO
分类号 H01L21/76;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108 主分类号 H01L21/76
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