| 摘要 |
<p>PURPOSE:To maintain the bit line potential at the intrinsic potential in follow up to a change in a source voltage and to improve an access speed by providing a current pass means of a high resistance to allow passage of the current except to a memory cell between the bit line and the grounding potential. CONSTITUTION:The device is so constituted that the current pass means 40 having a high resistance value R is provided between the bit line B (point A) connected to an initial-step part 30 of a sensing amplifier and the grounding potential and the slight pass current (i) flows always to a GND from the bit line B at all times. When a cell transistor TR 26 is on, the potential VA of the line B escapes to the GND via the TR 26 and, therefore, the characteristics are the same as shown in figure in the same way as heretofore. On the other hand, when the TR 26 is off, the potential at the point A escapes to the GND via the means 40 even slightly and the current (i) flows when the source voltage VCC changes from high to low. The potential VA, therefore, changes in follow up to a change in the voltage VCC and surely drops down to the intrinsic potential. The immediate lowering from the intrinsic potential is consequently possible and the access speed is improved at the time of lowering the potential VA by turning on the TR 26.</p> |
