发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To secure junction strength between a bump and a substrate while making the diameter of the bump compact and form the bump of photoresist that is thinner than plating on the bump by forming an opening at an opening part which is formed in resist films on the substrate in such a manner that the diameter of the opening is smaller than that of its base and forming an electrode, thereby performing plating so that the thickness of plating is thicker than the film thickness of resist. CONSTITUTION:An opening 11 is forming at an opening part in resist films 8 and 9 which are formed on a substrate 3 in such a manner that the diameter of the opening is smaller than that of its base and an electrode is formed by performing plating at the opening 11 so that the thickness of plating is thickener than the film thickness of resist. After that, when both photoresist films 8 and 9 are removed, the predetermined bump 12 is formed on a pad and the head part 12a of the bump 12 swells crosswise from the opening part of the opening 11. However, as the diameter of the head part is smaller than that of its base, the diameter of the head part becomes almost equal to that of the pad 4. Consequently, the diameter of the bump head part 12a can be reduced without reducing a junction area with the pad 4. Junction strength between the bump 12 and the substrate 3 is thus secured while making the diameter of the bump 12 compact; besides, the bump 12 is formed of resist that is thinner than the plating thickness of the bump 12.</p>
申请公布号 JPH02246218(A) 申请公布日期 1990.10.02
申请号 JP19890067884 申请日期 1989.03.20
申请人 FUJITSU LTD 发明人 KIKUCHI YOSHIBUMI
分类号 H01L21/288;H01L21/321;H01L21/60 主分类号 H01L21/288
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